Computational Screening of Bonding-Controlled Electronic Structures in One-Dimensional Cu/Ag-Based Hybrid Semiconductors.

Abstract

One-dimensional hybrid organic-inorganic semiconductors enable band-edge engineering through reduced dimensionality and interfacial orbital hybridization. Nevertheless, the electronic physics of Cu/Ag-based systems has received limited attention. Here, we perform high-throughput first-principles calculations on 90 Cu/Ag halide HOISs derived from experimentally reported parent structures to elucidate bonding-dependent electronic behavior. We uncover a clear transition from electronically isolated inorganic chains in ionic hybrids to strongly hybridized band edges in covalent and mixed-bonding hybrid frameworks, where ligand <i>p</i> orbitals cooperatively couple with Cu-derived states and halogen <i>p</i> orbitals. This hybridization produces <i>p</i>-orbital-dominated band edges, enhanced dispersion, and light-hole effective masses along the 1D chains. Guided by this bonding-driven mechanism, we further identify four Cu-based compounds, which are helpful for tuning light-harvesting properties in low-dimensional hybrid semiconductors.