Development of silicon-on-insulator direct electron detector with analog memories in pixels for sub-microsecond imaging.

Abstract

We have developed a high-speed recordable direct electron detector based on silicon-on-insulator technology. The detector has 16 analog memories in each pixel to record 16 images with sub-microsecond temporal resolution. A dedicated data acquisition system has also been developed to display and record the results on a personal computer. The performance of the direct electron detector as an image sensor is evaluated under electron irradiation with an energy of 30 keV in a low-voltage transmission electron microscope equipped with a photocathode electron gun. We demonstrate that the detector can record images at an exposure time of 100 ns and an interval of 900 ns.